ij , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. RFL1P08, rfl1p10 1 a, -80v and -100v, 3.65 ohm, p-channel power mosfets telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 features ? 1 a,-80v and-100v ' rds(on) = 3.65fl ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? majority carrier device ordering information part number RFL1P08 rfl1p10 package to-205af to-205af brand RFL1P08 rfl1p10 description these are p-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated cir- cuits. symbol go note: when ordering, include the entire part number. packaging jedec to-205af drain . (case) source gate nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
absolute maximum ratings tc = 25c, unless otherwise specified drain to source voltage (note 1 ) drain to gate voltage (rgs = 20kq) (note 1 ) ..................... vdgr continuous drain current ........................................ id pulsed drain current (note 3) ................................... idm gate to source voltage ....................................... vgs maximum power dissipation .................................... pq linear derating factor ............................................ operating and storage temperature ......................... tj, tstg maximum temperature for soldering leads at0.063in (1.6mm) from case for 10s ....................... t|_ RFL1P08 -80 -80 1 5 20 8.33 0.0667 -55 to 150 rfl1p10 -100 -100 1 5 20 8.33 0.0667 -55 to 150 300 300 units v v a a v w w/c c aution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: = 25cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage RFL1P08 rfl1p10 gate to threshold voltage zero gate voltage drain current gate to source leakage current drain to source on-voltage (note 2) drain to source on resistance (note 2) turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse-transfer capacitance thermal resistance junction to case symbol bvdss vgs(th) 'dss 'gss vds(on) rds(on) td(on) tr 'd(off) tf ciss coss crss r9jc test conditions id = 250na, vgs = o vgs = vds, id = 250|j.a vds = rated bvdss, vgs = ov vds = 0.8 x rated bvdss vgs = 0, tc=125c ves = 2ov, vds = o id = 1a, vgs = -10v id = 1a> vgs = -10v (figures e, 7) id=1a,vdd = -50v rg ? 501 vgs = -10v rl = 47q (figures 10, 11, 12) vgs = ov, vds = -25v (figure 9) min -80 -100 -2 - - - - - - - - - - - - typ _ - - - - - 7 15 14 11 - - - - max _ -4 -1 25 100 -3.65 3.65 25 45 45 25 150 80 30 15 units v v ^a ha na v n ns ns ns ns pf pf pf c/w source to drain diode specifications parameter source to drain diode voltage (note 2) diode reverse recovery time symbol vsd trr test conditions isd = -1a isd = -1a, dlsd/dt = soa/ns min - - typ - 135 max -1.4 - units v ns notes: 2. pulse test: pulse width < 300|is maximum, duty cycle < 2%. 3. repetitive rating: pulse width limited by mazimum junction temperature.
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